Posters - Monday
| MoP1 | Vishal Panchal1,2, Alexander Tzalenchuk1 and Olga Kazakova1
(1National Physical Laboratory, Hampton Road, Teddington, TW11 0LW, UK; 2Royal Holloway, University of London, Egham Hill, Egham, Surrey, TW20 0EX, UK) Screening property of bi-layer graphene investigated with scanning gate microscopy | |
| MoP2 | Grzegorz Rut and Adam Rycerz (Marian Smoluchowski Institute of Physics, Jagiellonian University, Kraków, Poland) Pseudodiffusive conducance and Landau level hierarchy in biased graphene bilayer | |
| MoP3 | J.M. Poumirol1, W. Yu2, X. Chen2, X. Chen2, C. Berger2, W.A. de Heer2, M.L. Smith3, T. Ohta3, W. Pan3,
M.O. Goerbig4, D. Smirnov1, Z. Jiang2
(1National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA; 2School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA; 3Sandia National Laboratories, Albuquerque, NM 87185, USA; 4Laboratoire de Physique des Solides, CNRS UMR 8502, Univ. Paris-Sud, F-91405 Orsay cedex, France) Magnetoplasmons in quasi-neutral epitaxial graphene nanoribbons | |
| MoP4 | D. Mastrogiuseppe1,2, A. Wong3, K. Ingersent3, S. Ulloa1,2 and N. Sandler1,2 (1Department of Physics and Astronomy, and Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701-2979, USA; 2Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, 14195 Berlin, Germany; 3Department of Physics, University of Florida, P.O. Box 118440, Gainesville, Florida, 32611-8440, USA) Gate-dependent Kondo states in bilayer graphene | |
| MoP5 | P.T. Robert1;2, R.-J. Du1, F. Wu1, A. Durand1, F. Hennrich1, M.M. Kappes1;3;4, H.v. Löhneysen1;2;4;5
and R. Danneau1;2
(1Institute of Nanotechnology, Karlsruhe Institute of Technology, Germany; 2Institute of Physics, Karlsruhe Institute of Technology, Germany; 3Institute of Physical Chemistry, Karlsruhe Institute of Technology, Germany; 4DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology, Germany; 5Institute for Solid-State Physics, Karlsruhe Institute of Technology, Germany) Electronic transport in carbon nanotube-graphene junctions | |
| MoP6 | Peter Rickhaus1, Romain Maurand1, Markus Weiss1, Christian Schönenberger1, Ming-Hao Liu2,
and Klaus Richter2
(1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel,Switzerland; 2Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany) Ballistic interferences in suspended graphene: Theoretical modeling from contact to contact |
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| MoP7 | J. Kuroki1, W. Norimatsu1 and M. Kusunoki2 (1Department of Applied Chemistry, Nagoya University, Japan; 2EcoTopia Science Institute, Nagoya University, Japan) In-plane structural features of graphene on SiC revealed by TEM observations | |
| MoP8 | Francesca Chiappini1, Steffen Wiedmann1, Uli Zeitler1, Konstantin S. Novoselov2, Andre K.Geim2,
Roman V. Gorbachev2, and Jan C. Maan1
(1Radboud University Nijmegen, Institute for Molecules and Materials and High Field Magnet Laboratory, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands; 2School of Physics and Astronomy, University of Manchester, UK) Gap opening at the charge neutrality point of a graphene transistor on hBN | |
| MoP9 | M. Schuett1, P.M. Ostrovsky2,3, I.V. Gornyi1,4, M. Titov5, B.N. Narozhny6, and A.D. Mirlin1,6,7 (1Institut fuer Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany; 2Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany; 3L. D. Landau Institute for Theoretical Physics RAS, 119334 Moscow, Russia; 4A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia; 5Radboud University Nijmegen, Institute for Molecules and Materials, NL-6525 AJ Nijmegen, Netherlands; 6Institut fuer Theorie der kondensierten Materie, Karlsruhe Institute of Technology, 76128 Karlsuhe, Germany; 7Petersburg Nuclear Physics Institute, 188350 St. Petersburg, Russia) Hall-drag and magneto-drag in graphene via kinetic equation approach | |
| MoP10 | Janik Kailasvuori1,2, Bretislav Sopik3, and Maxim Trushin4 (1International Institute of Physics, Universidade Federal do Rio Grande do Norte, 59078-400 Natal-RN, Brazil; 2Max-Planck-Institut f¨ur Physik komplexer Systeme, N¨othnitzer Str. 38, 01187 Dresden, Germany; 3Central European Institute of Technology, Masaryk University, Kamenice 735, 62500 Brno, Czech Republic; 4University of Konstanz, Fachbereich Physik M703, 78457 Konstanz, Germany) Conductivity of chiral particles: Boltzmann-like analytical approach and finite-size Kubo formula simulation |
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| MoP11 | E. Wolf and D. Lehmann (Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany) Influence of chirality on phonon-drag thermopower in monolayer and bilayer graphene | |
| MoP12 | S. Masubuchi1,2, K. Iguchi1, S. Morikawa1, M. Onuki1, K. Watanabe1, T. Taniguchi1, and T. Machida2 (1Institute of Industrial Science, University of Tokyo, Japan; 2Institute for Nano Quantum Information Electronics, University of Tokyo, Japan; 3National Institute for Material Science, Japan) Boundary Scattering in Ballistic Graphene | |
| MoP13 | M.M. Asmar1,2 and S.E. Ulloa1,2 (1Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA; 2Dahlem Center for Complex Quantum Systems, Freie Universität, Berlin, Germany) Spin dependent scattering in graphene systems: from impurity characterization to birefringent electron optics | |
| MoP14 | J.M. Poumirol1, K. Myhro2, Y. Kim1, J. Ludwig1, K. Myhro2, J. Lau2 and D. Smirnov1 (1National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA.; 2Department of Physics and Astronomy, University of California, Riverside, 92521 CA USA ) Gate dependent magnetophonon resonance in graphene | |
| MoP15 | S. Russo, I. Khrapach, F. Withers, T.H. Bointon, D.K. Polyushkin, W.L. Barnes, M.F. Craciun (Centre for Graphene Science, University of Exeter, Exeter, UK) Novel highly conductive graphene-based materials | |
| MoP16 | Nicolas Ubrig1, Peter Blake2, Dirk van der Marel1 and Alexey B. Kuzmenko1 (1Departement de Physique de la Matiere Condensee , Universite de Geneve, CH-1211 Geneve 4, Switzerland; 2Graphene Industries Ltd, Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester, M13 9PL, United Kingdom) Infrared spectroscopy of hole doped ABA-stacked trilayer graphene | |
| MoP17 | Ivana Petkovic1,2, F.I.B. Williams1,3, Keyan Bennaceur1, Fabien Portier1, Patrice Roche1,
and D. Christian Glattli1
(1Nanoelectronics, SPEC, CEA Saclay, France; 2Laboratoire National de Métrologie et dEssais, 78197 Trappes, France; 3Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, H-1525 Budapest, Hungary) Carrier drift velocity and edge magnetoplasmons in graphene | |
| MoP18 | P.A. Orellana1, L.Rosales1, L. Chico2 and M. Pacheco1 (1Departamento de Física, Universidad T. Federico Santa María, Casilla Postal 110V, Valparaíso, Chile; 2Departamento de Teoría y Simulación de Materiales, Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Cantoblanco, Spain) Spin-polarized electrons in bilayer graphene flakes | |
| MoP19 | Fadil Iyikanat, Ramazan Tugrul Senger (Department of Physics, Izmir Institute of Technology, Izmir, Turkey) Electronic and magnetic properties of zigzag edged triangular graphene flakes | |
| MoP20 | Hikari Tomori, Youiti Ootuka and Akinobu Kanda (Division of Physics and TIMS, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan) Electron transport in graphene with one dimensional local strain | |
| MoP21 | A. Gómez-León and G. Platero (Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain) Floquet-Bloch theory and topology in periodically driven lattices | |
| MoP22 | Y. Inoue1, T. Yamaguchi1, S. Masubuchi1,2, S. Morikawa1, M. Onuki1, K. Watanabe3, T. Taniguchi3, R. Moriya1 and T. Machida1,2,4 (1Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan; 2INQIE, University of Tokyo, Tokyo 153-8505, Japan; 3National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan; 4PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan) Electrical spin injection into graphene using h-BN tunnel barrier | |
| MoP23 | D. Prezzi1, A. Ferretti1, S. Wang1, A. Ruini1,2, E. Molinari1,2, P. Ruffieux3, J. Cai3, N.C. Plumb4, L. Patthey4, X. Feng5, K. Müllen5, C. A. Pignedoli3, and R. Fasel3,6 (1 Istituto Nanoscienze, Consiglio Nazionale delle Ricerche, 41125 Modena, IT; 2 Dept of Physics, Informatics and Mathematics, University of Modena & Reggio, 41125 Modena, IT; 3 Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, CH; 4 Swiss Light Source, Paul Scherrer Institut, 5232 Villigen, CH; 5 Max Planck Institut for Polymer Research, 55128 Mainz, Germany; 6 Department of Chemistry and Biochemistry, University of Bern, 3012 Bern, CH) Electron and optical spectroscopies of graphene nanoribbons: insights from ab-initio calculations | |
| MoP24 | Annette S. Plaut1, Ulrich Wurstbauer2, Aron Pinczuk2,3, Jorge M. Garcia4, and Loren N. Pfeiffer5 (1School of Physics, University of Exeter, Exeter EX4 4QL, UK; 2Department of Physics, Columbia University, New York, NY 10027, USA; 3Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA; 4MBE Lab, IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Madrid, E-28760, Spain; 5Electrical Engineering Department, Princeton University, NJ 08544, USA) Counting molecular-beam grown graphene layers | |
| MoP25 | Marcos R. S. Tavares and Cesar E.P. Villegas (Centro de Ciencias Naturais e Humanas, Universidade Federal do ABC, 09210-170, Santo André, SP, Brazil) Plasmons and single-particle excitations in single and double coupled graphene stripes | |
| MoP26 | Nojoon Myoung1, Kyungchul Seo1, S. J. Lee2 and Gukhyung Ihm1 (1Department of Physics, Chungnam National University, Daejeon 305-764, Korea; 2QSRC, Dongguk University, Seoul 100-715, Korea) High-performance graphene field-effect transistor and graphene spin-filter with atomically thin MoS2 tunnel barrier | |
| MoP27 | Nicolas Ubrig1, Shangyun Jo1;2, Alberto Ubaldini1, Alexey B. Kuzmenko1 and Alberto F. Morpurgo1;2 (1Departement de Physique de la Matiere Condensee , Universite de Geneve, CH-1211 Geneve 4, Switzerland; 2GAP, Universite de Geneve, CH-1211 Geneve 4, Switzerland) Photoluminescence and photocurrent of thin semiconducting transition metal dichalcogenides | |
| MoP28 | Mahdi Ghorbani-Asl, Pere Miró, Agnieszka Kuc, Thomas Heine (School of Engineering and Science, Jacobs University Bremen, Germany) Effect of mechanical deformations in electronic properties of transition metal dichalcogenides |
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| MoP29 | Agnieszka Kuc, Mahdi Ghorbani-Asl, Thomas Heine (School of Engineering and Science, Jacobs University Bremen, Germany) Tuning electronic properties of transition-metal dichalcogenides |
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| MoP30 | D. Sercombe1, S. Schwarz1, O. Del Pozo-Zamudio1, F. Liu1, B. J. Robinson2, E.A. Chekhovich1, O. Kolosov2, and A.I. Tartakovskii1 (1Department of Physics and Astronomy, University of Sheffield, S3 7RH, UK; 2Department of Physics, University of Lancaster, Lancaster LA1 4YB, UK) Dielectric substrate and capping effects on optical properties of a few atomic monolayer MoS2 sheets |
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| MoP31 | G.W. Mudd1, S.A. Svatek1, O. Makarovsky1, L. Eaves1, A. Patane1, P.H. Beton1, Z.D. Kovalyuk2, G.V. Lashkarev2, A.I. Dmitriev2 (1School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK; 2Institute for Problems of Materials Science, Ukrainian Academy of Sciences, Kiev, Ukraine) Tuneable photoluminescence emission from exfoliated InSe nanocrystals |
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| MoP32 | S. Schwarz1, O. Del Pozo-Zamudio1, D. Sercombe1, E.A. Chekhovich1, D.N. Borisenko2, N.N. Kolesnikov2, A.I. Tartakovskii1 (1Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, UK; 2Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka 142432, Russia) Photoluminiscence spectroscopy of thin sheets of gallium selenide | |
| MoP33 | J .R. Wallbank1, M. Mucha-Kruczyński1;2 and V. I. Fal'ko1 (1Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK; 2Department of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, UK) Band gap opening in graphene on transition metal dichalcogenides and related substrates | |
| MoP34 | L.M. Chepyga1, L.M. Kulikov1,2, L.G. Akselrud2 (1Frantsevich Institute for Problems of Materials Science of NASU 3, Krzhyzhanovsky Str., Kiev-142, 03680, Ukraine; 2Franko Lviv National University. 6, Cyril and Mefody Str., Lviv-79005, Ukraine) Novel experimental technique of synthesis two-dimensional nanoparticles of autointercalated niobium diselenide |
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| MoP35 | K. Kośmider 1 and J. Fernández-Rossier 1,2 (1 International Iberian Nanotechnology Laboratory, Braga, Portugal; 2 Universidad de Alicante, Alicante, Spain) Electronic properties of MoS2-WS2 heterojunction | |
| MoP36 | Pilkyung Moon1;2 and Mikito Koshino1 (1Department of Physics, Tohoku University, Sendai, 980-8578, Japan; 2School of Computational Sciences, Korea Institute for Advanced Study, 130-722, Republic of Korea) Energy spectrum, quantum Hall effect, and valley splitting in graphene on hexagonal boron nitride | |
| MoP37 | F. Manni1, Y. Léger1,2, Yuri G. Rubo3, R. André4 & B. Deveaud1 (1ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland; 2FOTON Lab, CNRS UMR6082, INSA 20 Ave des Buttes de Coësmes, CS14315, 35043 Rennes Cedex, France; 3Centro de Investigación en Energía, UNAM, Temixco, Morelos, 62580, Mexico; 4Institut Néel, CNRS, 25 Avenue des Martyrs, 38042 Grenoble, France) Hyperbolic spin vortices and textures in spinor polariton condensates | |
| MoP38 | M. Yamaguchi 1, K. Kamide 1, R. Nii 1, T. Ogawa 1 and Y. Yamamoto 2, 3 (1 Department of Physics, Osaka University, Toyonaka, Osaka 560-0043, Japan; 2 National Institute of Informatics, Hitotsubashi 2-1-2, Chiyoda-ku, Tokyo 101-8403, Japan; 3 E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA) BEC-BCS-laser crossover theory of exciton-polariton systems | |
| MoP39 | S. Smolka1, W. Wuester1;2, S. Faelt1;2, F. Haupt1, W. Wegscheider2, A. Imamoglu1 (1Institute for Quantum Electronics - ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland; 2 Laboratory for Solid State Physics - ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland) Light-matter interaction between a two-dimensional electron gas and a micro-cavity | |
| MoP40 | M. Załużny (Institute of Physics, UMCS, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland) Hybrid intersubband-intrasubband cavity polaritons | |
| MoP41 | A.V.Chaplik (Institute of Semiconductor Physics, Novosibirsk, 630090, Russia) Local modes in structures with multicomponent plasma | |
| MoP42 | Michał Matuszewski and Emilia Witkowska (Instytut Fizyki Polskiej Akademii Nauk, Al. Lotników 32/46, 02-668 Warsaw, Poland) Universality in condensation of exciton-polaritons |
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| MoP43 | B. Piętka1, D. Zygmunt1, J. Szczytko1, J. Łusakowski1, P. Zięba2, I. Tralle2, F. Morier-Genoud3, B. Deveaud3 (1Institut of Experimental Physics, Faculty of Physics, University of Warsaw, Poland; 2Rzeszów University, Institute of Physisc, Mathematics & Natural Science Departement, Rzeszów, Poland; 3Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland) The effect of magnetic field on the emission from exciton polaritons in semiconductor microcavity | |
| MoP44 | D. Ballarini1,2, R. Hivet3, E. Cancellieri3,4, F. M. Marchetti4, M. H. Szymanska5, C. Ciuti6, E. Giacobino3, D. Sanvitto1,2, A. Bramati3 (1 Istituto Italiano di Tecnologia, IIT-Lecce, Via Barsanti, 73010 Lecce, Italy; 2 NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce, Italy; 3Laboratoire Kastler Brossel, UPMC-Paris6, École Normale Supérieure et CNRS, France; 4Fisica Teorica de la Materia Condensada, Universidad Autonoma de Madrid, Madrid, Spain 5Department of Physics, University of Warwick, Coventry, United Kingdom; 6Laboratoire Matériaux et Phénomenes Quantiques, Université Paris Diderot et CNRS, France ) Optical control of vortex-antivortex lattices of polariton quantum fluids | |
| MoP45 | M. Pieczarka 1, P. Podemski 1, A. Musiał 1, K. Ryczko 1, A. Mika 1, M. Kozub 1, G. Sęk 1, J. Misiewicz 1, F. Langer 2, A. Forchel 2, S. Höfling 2, M. Kamp 2 (1 Institute of Physics, Wrocław University of Technology, 50-370 Wrocław, Poland; 2 Technische Physik, Physikalisches Institut, Universität Würzburg & Wilhelm Conrad Röntgen-Center for Complex Material, Am Hubland, D-97074 Würzburg, Germany) Towards exciton polaritons at telecommunication wavelengths in GaAs-based microcavities | |
| MoP46 | Thi Uyen-Khanh Dang and Marten Richter (Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36 EW 7-1, 10623 Berlin, Germany) Theory of 2D photon echo spectroscopy on quantum well intersubband dynamics | |
| MoP47 | A. Gonzalez-Tudela1, P.A. Huidobro1, L. Martín-Moreno2, FJ. García-Vidal1, C. Tejedor1 (1 Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, 28049, Madrid, Spain; 2 Instituto de Ciencia de Materiales de Aragón and Departamento de Física de la Materia Condensada, CSIC-Universidad de Zaragoza, E-50009, Zaragoza, Spain) Quantum plasmonics: strong-coupling between quantum emitters and surface plasmon polaritons | |
| MoP48 | M. Sich 1, F. Fras 1, A. Gorbach 2, R. Hartley2 , E. A. Cerda-Mendez3, K. Biermann3, R. Hey3, P. Santos3, M. S. Skolnick 1, D. V. Skryabin2 , D. N. Krizhanovskii 1 (1 Department of Physics and Astronomy, University of Sheffield UK; 2 Department of Physics, University of Bath UK; 3Paul-Drude-Institut, Berlin Germany) Spin properties of bright polariton solitons in a semiconductor microcavity: The effect of polariton polarisation multistability | |
| MoP49 | Takashi Kobayashi, Takeshi Ota, Satoshi Sasaki and Koji Muraki (NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan) Nonequilibrium quantum cellular automata effect in a three-terminal triple quantum dot | |
| MoP50 | M. Busl1, G. Granger2, L. Gaudreau2,3, R. Sánchez1, A. Kam2, M. Pioro-Ladriere3, S. A. Studenikin2, P. Zawadzki2, Z. R. Wasilewski2, A. S. Sachrajda2 and G. Platero1 (1 Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain; 2 National Research Council, 1200 Montreal Road, Ottawa, Ontario, K1A 0R6 Canada; 3Département de Physique, Université Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada) Transport via coherent state superpositions in triple quantum dots | |
| MoP51 | M. Kotzian1, M.C. Rogge1, K. Roszak2, and R.J. Haug1 (1Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover, Appelstrasse 2, 30167 Hannover, Germany; 2Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Poland) Two-path transport measurements with bias dependence on a triple quantum dot | |
| MoP52 | C. Kenfack Sadem 1 ,2, A. J.Fotué1, L. C. Fai1, M. Tchoffo1, R. M. Keumo Tsiaze1, J. E. Danga1, and J. T. Diffo1 (1University of Dschang, Faculty of Science, Department of Physics, Mesoscopic and Multilayer Structure Laboratory , Cameroon. Po Box: 67 Dschang - Cameroon; 2International Chair in Mathematical Physics and Applications, Univ. of Abomey?Calavi,Cotonou, Benin) Magnetical control of spin qubits in quantum wire | |
| MoP53 | Yasuhiro Tokura1,2 and Toshihiro Kubo1 (1Graduate School of Pure and Applied Sciences, University of Tsukuba; 2NTT Basic Research Laboratories, NTT Corporation, Japan) Initialization of multiple quantum spins with non-equilibrium bias | |
| MoP54 | Piotr Trocha, Ireneusz Weymann (Adam Mickiewicz University, 61-614 Poznań, Poland) The role of cotunneling processes in Andreev transport through quantum dot coupled to two ferromagnetic leads and one superconducting electrode | |
| MoP55 | Karol Izydor Wysokiński (Institute of Physics, M. Curie-Skłodowska University, Radziszewskiego 10, Pl 20-031 Lublin, Poland) Charge and spin Seebeck effects in hybrid quantum dot junctions | |
| MoP56 | L. Fricke1, M. Wulf1, B.Kaestner1,V. Kashcheyevs2, J. Timoshenko2, P. Nazarov2, F. Hohls1, P. Mirovsky1, B. Mackrodt1, R. Dolata1, T. Weimann1, K. Pierz1, H.W. Schumacher1 (1Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116 Braunschweig, Germany; 2Faculty of Physics and Mathematics, University of Latvia, Riga LV-1002, Latvia) Counting statistics of single-electron capture by a dynamic quantum dot |
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| MoP57 | R.S. Deacon1, J. Sailer2, A. Oiwa2, T. Fuse1, M.T. Deng3, H.Q. Xu3, S. Tarucha2,4 and K. Ishibashi1 (1 Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198, Japan; 2 The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656, Japan; 3Division of Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden; 4Center for Emergent Matter Science (CEMS), RIKEN, Wako, Saitama, 351-0198, Japan) Supercurrents in niobium-InSb nanowire Josephson junctions | |
| MoP58 | Takeshi Ota, Kenichi Hitachi and Koji Muraki (NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, 243-0198, Japan) Signature of Landau-Zener-Stückelberg interference in coherent charge oscillations of a one-electron double quantum dot | |
| MoP59 | Floris R. Braakman1, Pierre Barthelemy1, Christian Reichl2, Werner Wegscheider2 and Lieven M.K. Vandersypen2 (1Kavli Institute of Nanoscience, Delft, The Netherlands; 2ETH Zurich, Zurich, Switzerland) Coherent electron transfer between distant quantum dots in a linear array | |
| MoP60 | F. Haupt1, S. Smolka1, M. Hanl2, W. Wüster1, J. Miguel-Sanchez1, J. v. Delft2 and A. Imamoglu1 (1Institute of Quantum Electronics - ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland; 2Arnold Sommerfeld Center for Theoretical Physics, Ludwig-Maximilians-Universität München, D-80333 München, Germany) Fano-interference in an optical transition from a neutral quantum dot to a correlated many-body state | |
| MoP61 | Łukasz Karwacki1, Piotr Trocha1, and Józef Barnaś1;2 (1Faculty of Physics, Adam Mickiewicz University, 61-614 Poznań, Poland; 2 Institute of Molecular Physics, Polish Academy of Sciences, 60-179 Poznań, Poland) Enhancement of thermoelectric efficiency in a quantum dot coupled to ferromagnetic electrodes due to Rashba spin-orbit coupling | |
| MoP62 | Sandra Kuhn, Andreas Knorr and Marten Richter (Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany) Determination of quantum dot parameters using quantum dot continuum transitions | |
| MoP63 | Anna Sitek1;2, Andrei Manolescu2, and Paweł Machnikowski1 (1Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland; 2School of Science and Engineering, Reykjavik University, Menntavegur 1, IS-101 Reykjavik, Iceland) Collective optical effects in multiple quantum dots | |
| MoP64 | M. Molas1,2, A. A. L. Nicolet2, A. Babiński1, and M. Potemski2 (1 Faculty of Physics, University of Warsaw, Hoża 69, PL 00-681 Warsaw, Poland; 2 Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble, France) Fine structures of triexcitons in single GaAlAs/AlAs quantum dots | |
| MoP65 | A. M. Alexeev1, I. A. Shelykh2 and M. E. Portnoi1 (1 School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, UK; 2 Science Institute, University of Iceland, Dunhagi 3, IS-107, Reykjavik, Iceland) Aharonov-Bohm quantum rings in microcavities | |
| MoP66 | N. A. Jahan1, 2, C. Hermannstädter1, K. Akahane3, M. Sasaki3, H. Kumano1 and I. Suemune1 (1RIES, Hokkaido Univ., Japan; 2Grad. School of Inform. Science and Technology, Hokkaido Univ., Japan; 3National Institute of Information and Communications Technology, Tokyo, Japan) Temperature dependence of single quantum dot luminescence: influence of inter-dot coupling | |
| MoP67 | Daniel R. Stephan1,2, Jayeeta Bhattacharyya1, Manfred Helm1,2, Yongheng Huo3, Armando Rastelli3,4, Oliver Schmidt3 and Harald Schneider1 (1 Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany; 2 Technische Universität Dresden, Dresden, Germany; 3 Institute for Integrative Nanosciences, IFW Dresden, Dresden, Germany; 4 Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, Linz, Austria) Inter-sublevel transitions in single InAs/GaAs quantum dots | |
| MoP68 | X. Liu 1, T. Asano 1, S. Odashima 1, H. Nakajima 1,2, H. Kumano 1 and I. Suemune 1 (1 Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan; 2 Research Fellow of the Japan Society for the Promotion of Science, Tokyo 102-8472, Japan) Photon extraction enhancement and suppression of multi-photon emission from an InAs quantum dot in a metal-embedded nanocone structure | |
| MoP69 | T. Obata, M. Yamamoto, and S. Tarucha (Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan) Floating gate in a 2DEG island for electrostatically connecting distant quantum dots | |
| MoP70 | D. Sonnenberg, A. Graf, A. Küster, Ch. Heyn, and W. Hansen (Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany) Ultra-low density GaAs quantum dots by nanohole filling | |
| MoP71 | A. Küster, D. Sonnenberg, A. Graf, Ch. Heyn and W. Hansen (Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany) Coupling and wavelength tuning of GaAs quantum dots | |
| MoP72 | E. Zielony1, E. Płaczek-Popko1, P. Nowakowski2, Z. Gumienny1, A. Suchocki2 and G. Karczewski2 (1Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland; 2 Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland) Electro-optical characterization of Ti/Au-ZnTe Schottky diodes with CdTe quantum dots | |
| MoP73 | E. Zielony1, E. Płaczek-Popko1, A. Henrykowski1, Z. Gumienny1, P. Kamyczek1, J. Jacak1, P. Nowakowski2 and G. Karczewski2 (1 Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland; 2 Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland) Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy | |
| MoP74 | Manus Hayne1, Samuel Harrison1, Matthew Young1, Peter D. Hodgson1, Robert J. Young1, Andre Strittmatter2, Andrea Lenz2, Udo W. Pohl2 and Dieter Bimberg2 (1 Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK; 2 Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin, Germany) Carrier confinement in stacks of InAs/GaAs sub-monolayer quantum dots: quantum dots or quantum wells? |
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| MoP75 | Marek J. Korkusinski1, Anna H. Trojnar1,2, Udson Mendes1, Mateusz Goryca3, Maciej Koperski3, Tomasz Smolenski3, Piotr Kossacki3, Piotr Wojnar4, and Pawel Hawrylak1,2 (1 Quantum Theory Group, Security and Disruptive Technologies, National Research Council of Canada, Ottawa, Canada; 2 Department of Physics, University of Ottawa, Ottawa, Canada; 3 Institute of Experimental Physics, University of Warsaw, Warsaw, Poland; 4 Institute of Physics, Polish Academy of Sciences, Warsaw, Poland) Fine structure of a biexciton in a quantum dot with magnetic impurity: Magnetic sensing of a spinless system | |
| MoP76 | D. E. Reiter1, V. M. Axt2, and T. Kuhn1 (1Institut für Festkörpertheorie, Universität Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany; 2Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany) Optical spin control of a single Mn atom in a single quantum dot via the light hole exciton | |
| MoP77 | Juan I. Climente, Carlos Segarra and Josep Planelles (Dept. de Química Física i Analítica, Universitat Jaume I, Castelló, Spain) Electron spin relaxation in quantum dots: effect of the 3D shape |
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| MoP78 | K. Ryczko, M. Kubisa and J. Misiewicz (Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Poland) Effect of strain on the spin splitting of holes in GaAs/GaAlAs quantum wells | |
| MoP79 | Fumiya Nagasawa1, Makoto Kohda1,2, and Junsaku Nitta1 (1Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan; 2PRESTO, Japan Science and Technology Agency, Saitama 331-0012, Japan) Spin-induced time reversal symmetry breaking in an InGaAs mesoscopic ring with Rashba spin-orbit interaction | |
| MoP80 | Mark L. Kerfoot1, Alexander Govorov2, Davis Lu1, Randall Babaoye1, Allan S. Bracker3, Daniel Gammon3, Michael Scheibner1 (1 School of Natural Sciences-Physics, University of California Merced, 5200 N Lake Rd., Merced CA 95343; 2 Department of Physics and Astronomy, Ohio University, 45701, Athens Ohio; 3 Naval Research Laboratory. 4555 Overlook Ave, SW, Washington DC 20375) Phonon-induced transparency in quantum dot molecules | |
| MoP81 | L. Fernandes dos Santos1, Yu. A. Pusep1, L. Villegas-Lelovsky2,3, V. Lopez-Richard2, G. E. Marques2, G. M. Gusev4, D. Smirnov5 (1Instituto de Física de Sao Carlos, Universidade de Sao Paulo, 13560-970 Sao Carlos, SP, Brazil; 2Departamento de Física, Universidade Federal de Sao Carlos, 13565-905 Sao Carlos, SP, Brazil; 3Instituto de Física, Universidade de Brasília, 70910-900 Brasília, DF, Brazil; 4Instituto de Física da Universidade de Sao Paulo, 05315-970 Sao Paulo, SP, Brazil; 5National High Magnetic Field Laboratory, Tallahassee, Florida 32312, USA) Circularly polarized photoluminescence as a probe of spin polarization and interaction in GaAs/AlGaAs quantum hall bilayers | |
| MoP82 | A. Matulis (Semiconductor Physics Institute, Center of Physical Sciences and Technology, Gostauto 11, LT-01108 Vilnius, Lithuania) Broken translation symmetry and edge states |
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| MoP83 | Inti Sodemann, Allan H. MacDonald (Department of Physics, University of Texas at Austin, Austin, Texas 78712) Spin-orbit coupling as an intrinsic pinning mechanism for stripe orientation in high Landau levels |
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| MoP84 | S. Tsuda 1, A. Fukuda 2, M. H. Nguyen 1, D. Terasawa 2 and A. Sawada 3 (1 Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan; 2 Department of Physics, Hyogo College of Medicine, Nishinomiya, Hyogo 663-8501, Japan; 3 Research Center for Low Temp. and Mat. Sci., Kyoto Univ., Kyoto 606-8501, Japan) Insulating phase in the dynamically nuclear spin polarized ?=2/3 quantum Hall state | |
| MoP85 | Masayuki Hashisaka 1, Tomoaki Ota 1, Koji Muraki 2 and Toshimasa Fujisawa 1 (1 Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo, Japan; 2 NTT Basic Research Laboratories, NTT Corporation, Atsugi, Japan) Shot noise of quasiparticles at local fractional quantum Hall states measured by a cross correlation technique | |
| MoP86 | D.A. Kozlov 1,2, Z.D. Kvon 1,2, D. Weiss 3, N.N. Mikhailov1, and S.A. Dvoretsky1 (1 Instiutte of Semiconductor Physics, Novosibirsk, Russia; 2 Novosibirsk State University, Russia; 3 Regesburg University, Regensburg, Germany ) Giant Zeeman-splitting induced Spin Hall Effect in Dirac Fermions system in HgTe quantum wells | |
| MoP87 | A. M. Alexeev and M. E. Portnoi (School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, UK) Two-phonon scattering in graphene in the quantum Hall regime | |
| MoP88 | S. Baer, C. Rössler, T. Ihn, K. Ensslin, C. Reichl, and W. Wegscheider (Solid State Physics Laboratory, ETH Zurich, 8093, Switzerland) Quantum point contacts in the fractional quantum Hall regime | |
| MoP89 | Tobias Kramer (Institut für Theoretische Physik, Universität Regensburg, Germany; Department of Physics, Harvard University, USA) Self-consistent transport and boundary conditions in finite quantum Hall devices | |
| MoP90 | M. Cygorek, C. Thurn, and V.M. Axt (Institut für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany) Non-Markovian spin transfer dynamics in optically excited diluted magnetic semiconductor quantum wells | |
| MoP91 | C. Hübner, B. Baxevanis, and D. Pfannkuche (I. Institute of Theoretical Physics, Hamburg University) Dynamical spin reversion with spin polarized current |
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| MoP92 | Cezary Śliwa1, Magdalena Birowska2, Jacek A. Majewski2, and Tomasz Dietl1,2 (1Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland; 2Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warszawa, Poland) Anisotropy of the RRKY interaction in ferromagnetic (Ga,Mn)As | |
| MoP93 | K. Filar 1 , K. Rogacki 1,2 , P. Przyslupski 3 , V. I. Nizhankovskii 1 (1 International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 53-421 Wroclaw, Poland; 2 Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okolna 2, 50-422 Wroclaw, Poland; 3 Institute of Physics, Polish Academy of Sciences, Lotnikow Ave. 32/46, 02-668 Warsaw, Poland) Chemical potential investigations of the surface of ferromagnetic-superconducting multilayers |
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| MoP94 | K. Gas1, J. Sadowski 2,1, T. Kasama3, A. Siusys1, W. Zaleszczyk1, T. Wojciechowski1, J. F. Morhange4, A. Altintaş5, H. Q. Xu6 and W. Szuszkiewicz1 (1 Institute of Physic PAS, al. Lotników 32/46, PL-02-668 Warszawa, Poland; 2 MAX-IV laboratory, Lund University, Box 118, SE-221 00 Lund, Sweden; 3 Center for Electron Nanoscopy, TUD, DK-2800 Kongens Lyngby, Denmark; 4 Institut des Nanosciences de Paris, UMR 7588, UPMC, 4 pl. Jussieu, 75252 Paris, France; 5 Division of Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden; 6 Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China) Selected physical properties of auto-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates | |
| MoP95 | J. C. B. Pomayna1, F. G. G. Hernandez1, G. M. Gusev1, N. C. Mamani2, Yu. A. Pusep2, and A. K. Bakarov3 (1Instituto de Física, Universidade de Sao Paulo, Caixa postal 66318 - CEP 05315-970, Sao Paulo, SP, Brazil 2Instituto de Física de Sao Carlos da Universidade de Sao Paulo, Caixa Postal 66318 CEP 05315-970, Sao Carlos, SP, Brazil; 3Institute of Semiconductor Physics, Novosibirsk 630090, Rusia ) Magneto-intersubband oscillations of a wide quantum well in an electrically tuned triangular antidot lattice | |
| MoP96 | Tomotsugu Ishikura, Zhixin Cui, Keita Konishi, Joungeob Lee and Kanji Yoh (Research Center of Integrated Quantum Electronics, Hokkaido University, Sapporo, Japan) Spin accumulation at the Fe/Si interface and two types of Hanle characteristics | |
| MoP97 | Andrey A. Sherstobitov1,2, Grigori M. Minkov1,2, Aleksander V. Germanenko2, Olga E. Rut2, Nikolay N. Mikhailov3, Sergei A. Dvoretski3 (1 Institute of Metal Physics, UbRAS, Ekaterinburg, Russia; 2 Ural Federal University, Ekaterinburg, Russia; 3 Institute of Semiconductor physics, RAS, Novosibirsk, Russia) Electron tunneling spectroscopy of 2D HgTe quantum well with inverted energy spectrum | |
| MoP98 | Chia-Wei Huang1, Efrat Shimshoni1, Dmitry Gutman1, Sam T. Carr2 and A. Mirlin2 (1Department of Physics, Bar-Ilan University, Ramat Gan, 52900, Israel ;2Institute for Theoretical Condensed Matter physics, Karlsruhe Institute for Technology, Karlsruhe, Germany) Transport via single and double quantum point contacts in 2D topological insulators | |
| MoP99 | D. A. Kozlov1, Z. D. Kvon1;2, D.Weiss3, N. N. Mikhailov1, S. A. Dvoretskiy1 (1A. V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia; 2 Novosibirsk State University, 630090, Novosibirsk, Russia; 3 Regensburg University, 93053, Regensburg, Germany) Transport properties of a 3D topological insulator on the basis of a strained high mobility HgTe film | |
| MoP100 | B. M. Wojek1, R. Buczko2, S. Safaei2, P. Dziawa2, B. J. Kowalski2, M. H. Berntsen1, T. Balasubramanian3, M. Leandersson3, A. Szczerbakow2, P. Kacman2, T. Story2, and O. Tjernberg1 (1 KTH Royal Institute of Technology, ICT Materials Physics, Electrum 229, 164 40 Kista, Sweden; 2 Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland; 3MAX IV Laboratory, Lund University, P.O. Box 118, 221 00 Lund, Sweden) Spin polarization of surface states on (100) Pb0.73Sn0.27Se |
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| MoP101 | A.Rahim1, A.D.Levin1, G.M.Gusev1, Z.D.Kvon2;3, E.B Olshanetsky2, N.N.Mikhailov2, and S.A.Dvoretsky2 (1Instituto de Física da Universidade de Sao Paulo, 135960-170, Sao Paulo, SP, Brazil; 2Institute of Semiconductor Physics, Novosibirsk 630090, Russia; 3Novosibirsk State University, Novosibirsk, 630090, Russia) Nonlocal transport near charge neutrality point in two-dimensional topological insulator | |
| MoP102 | Grigory Tkachov, Ewelina M. Hankiewicz, Hartmut Buhmann and Laurens W. Molenkamp (Wuerzburg University, Am Hubland, 97074 Wuerzburg, Germany) Berry-phase-controlled weak antilocalization and Josephson effects in HgTe topological insulator materials | |
| MoP103 | G. Grabecki1;2 , J. Wróbel1;3, M. Czapkiewicz1, L. Cywiński1, S. Gierałtowska1, E. Guziewicz1, M. Zholudev4;5, V. Gavrilenko5, N. N. Mikhailov6, S. A. Dvoretski6, W. Knap4, F. Teppe4 and T. Dietl1;7;8 (1Institute of Physics, Polish Academy of Sciences, PL-02 668 Warszawa, Poland; 2Department of Mathematics and Natural Sciences, College of Sciences, PL 01-938 Warszawa, Poland; 3Institute of Physics, Rzeszow Uniwersity, PL-35 959 Rzeszow, Poland; 4L2C, UMR No5221 CNRS, Universite Montpellier 2, GIS-TERALAB, F-34095 Montpellier, France; 5Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia; 6Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia; 7Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, PL-00 681 Warszawa, Poland; 8WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan) Topological protection length in HgTe/(Hg,Cd)Te quantum wells | |
| MoP104 | Yu. B. Vasilyev1,2, J. Ludwig 2, J-M. Poumirol 2, N. N. Mikhailov3, G. Yu. Vasileva1,4, and D. Smirnov2 (1 Ioffe Physical Technical Institute RAS, St. Petersburg, 194021, Russia; 2 National High Magnetic Laboratory, Tallahassee, Florida, 32310, USA; 3 Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090 Russia; 4 St. Petersburg State Polytechnical University, St. Petersburg, 195251 Russia) Level Spectroscopy of Dirac fermions in HgTe quantum wells | |
| MoP105 | H.V.A. Galeti 1, Y. Galvao Gobato 2, M.J.S.P.Brasil 3, M. Henini 4, G. Hill5 (1 Department of Eletrical Engineering, Federal University of Sao Carlos, Sao Carlos, Brazil; 2 Physics Department, Federal University of Sao Carlos, Sao Carlos, Brazil; 3Gleb Wataghin Physics Institute, UNICAMP, Campinas, Brazil; 4School of Physics and Astronomy, University of Nottingham, Nottingham, UK; 5Department of Eletronic and Eletrical Engineering, University of Sheffield, Sheffield, UK) Light controlled spin polarization in two dimensional hole gases | |
| MoP106 | A. A. Kozikov 1, D. Weinmann 2, C. Rössler 1, T. Ihn 1, K. Ensslin 1, C. Reichl 1, and W. Wegscheider 1 (1 Solid States Physics laboratory, ETH Zürich, CH-8093 Zürich, Switzerland; 2 Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, F-67034 Strasbourg, France) Imaging magnetoelectric subband depopulation in ballistic constrictions | |
| MoP107 | Sigurdur I. Erlingsson and Gunnar Thorgilsson (School of Science and Engineering Reykjavik University, Menntavegi 1, IS-101 Reykjavik, Iceland) Effects of spin-orbit coupling on transport through a QPC modulated by a periodic potential | |
| MoP108 | A. Iagallo1, N. Paradiso1, S. Roddaro1;2, C. Reichl3, W. Wegscheider3, S. Heun1, and F. Beltram1 (1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy; 2Istituto Officina dei Materiali CNR, Laboratorio TASC, Basovizza (TS), Italy; 3 Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland) Scanning Gate Imaging of the 0.7 anomaly | |
| MoP109 | P. H. Wu1, Y. S. Huang1, H. P. Hsu2, C. Li3, and S. H. Huang3 (1 Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan; 2 Department of Electronic Engineering, Ming Chi University of Technology, Taishan, Taipei 243, Taiwan; 3 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People's Republic of China) Optical characterization of strain-compensated Ge/Si0.16Ge0.84 multiple quantum wells on silicon-based germanium virtual substrate | |
| MoP110 | Rayda Gammag1 and Cristine Villagonzalo2 (1Asia Pacific Center for Theoretical Physics, POSTECH, Pohang, 790-784 Korea; 2National Institute of Physics, University of the Philippines Diliman, Quezon City, 1101 Philippines) Signatures of Landau level crossings in a two-dimensional electron gas |
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| MoP111 | Avik Kumar Mahata (National Institute Of Technology, Materials Science and Engineering, MME Department, Trichy, Tamilnadu, India-620015) Formulating transmission probabilities of arbitrary potential in a 2-dimensional quantum chaotic systems | |
| MoP112 | B. A. Danilchenko1, N.A.Tripachko1, A. E. Belyaev2, S. A. Vitusevich3, H.Hardtdegen3, H.Lüth3 (1Institute of Physics, NASU, Pr. Nauki 46, Kiev 03028, Ukraine; 2Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev 03028, Ukraine; 3Peter Grünberg Institute, Forschungszentrum Jülich, Jülich D-52425, Germany) Quasi-ballistic transport in AlGaN/GaN heterostructures in extremely high electric fields | |
| MoP113 | L. Bockhorn1, I. V. Gornyi2, A. D. Mirlin2, C. Reichl3, D. Schuh4, W. Wegscheider3, and R. J. Haug1 (1 Institut für Festkörperphysik, Leibniz Universität Hannover; 2 Institut für Nanotechnologie, Karlsruhe Institute of Technology; 3 Laboratorium für Festkörperphysik, ETH Zurich; 4 Institut für Experimentelle und Angewandte Physik, Universität Regensburg) Negative magnetoresistance induced by an interplay of smooth disorder and rare strong scatterers | |
| MoP114 | A. F. Adiyatullin, V. S. Bagaev, V. S. Krivobok, S. N. Nikolaev and E.E. Onishchenko (Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia) Influence of doping on "exciton gas - electron-hole liquid" phase transition in SiGe quantum wells |
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| MoP115 | B. Voisin1, B. Roche1, E. Dupont-Ferrier1, X. Jehl1, R. Wacquez2, M. Vinet2, S. De Franceschi1, M. Sanquer1 (1SPSMS, UMR-E CEA / UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble, France; 2CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France) Charge coherence and Fermi-edge singularity in dopant-based devices in silicon | |
| MoP116 | M. Tallarida, C. Das and D. Schmeisser (Brandenburg University of Technology, Applied Physics - Sensors, Konrad Wachsmann Allee, 17, 03046, Cottbus, Germany) Electronic properties of TiO2 films grown by atomic layer deposition | |
| MoP117 | P. J .J. Luukko1, E. Räsänen2 (1Nanoscience Center, University of Jyväskylä, FI-40014 Jyväskylä, Finland; 2Department of Physics, Tampere University of Technology, FI-33101 Tampere, Finland) Imaginary time propagation code for large-scale two-dimensional eigenvalue problems in magnetic fields |
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| MoP118 | A. T. Hatke1, B. Magill1, Y. Liu2, L. W. Engel1, M. Shayegan2, L. N. Pfeiffer2, K. W. West2, and K. W. Baldwin2 (1National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA; 2Princeton University, Princeton, NJ 08544, USA) Phase transition of pinning modes in wide quantum wells | |
| MoP119 | Olivio Chiatti1, Sven S. Buchholz1, Christian Heyn2, Wolfgang Hansen2, Saskia F. Fischer1 (1Neue Materialien, Institut fur Physik, Humboldt-Universitat zu Berlin, D-10099 Berlin; 2FG Wachstum, Institut fur Angewandte Physik, Universitat Hamburg, D-20148 Hamburg) Magnetotransport in nanostructured InAs-based high electron mobility transistors | |
| MoP120 | A.B. Tchapda, C. Kenfack Sadem, M.B. Kenmoe, J. Diffo , A. Fotué, and L.C. Fai (University of Dschang, Condended Matter Division, Mesoscopic and Multilayer Structure,PO.Box 67 Dschang, Cameroon) Landau-Zener theory: slow and fast noise in nanoscale systems | |
| MoP121 | V.T. Renard 1, B. A. Piot 2, Y. Niida 3,4, D. Tregurtha4, A. Fujiwara5, Y. Hirayama3, X. Waintal1, G. Fleury6 and K. Takashina4 (1 SPSMS, UMR-E 9001, CEA-INAC/UJF-Grenoble 1, France; 2 LNCMI-Grenoble, CNRS-UJF-UPS-INSA, France 3 Graduate School of Science, Tohoku University, Japan; 4 Department of Physics, University of Bath, UK 5 NTT Basic Research Laboratories, NTT Corporation, Japan; 6 SPEC-IRAMIS, CEA Saclay, France ) Effects of valley polarization on spin polarization in a silicon 2DEG | |
| MoP122 | Ding Zhang, Xuting Huang, Werner Dietsche, Klaus von Klitzing, and Jurgen H. Smet (Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany) Evidence for two-dimensional Wigner crystal formation in chemical potential measurements | |
| MoP123 | V. K. Guduru1, A. McCollam1, A. Granados del Aguila1, S. Wenderich2, A. Jost1, M. K. Kruize2, P. C. M. Christianen1, G. Rijnders2, A. Brinkman2, H. Hilgenkamp2, J. C. Maan1 and U. Zeitler1 (1 High Field Magnet Laboratory and IMM, Radboud University Nijmegen, NL; 2 MESA+ Institute for Nanotechnology, University of Twente, Enschede, NL) Thermally and optically excited multi-channel transport at the interface of LaAlO3/SrTiO3 heterostructures | |
| MoP124 | Toshihito Osada, Mitsuyuki Sato, Kazuhito Uchida, and Takako Konoike (Institute for Solid State Physics, University of Tokyo, Kashiwa 277-8581, Japan) Surface magnetotransport due to helical edge state in the organic dirac fermion system at the quantum limit | |
| MoP125 | Carsten Franke 1,2, Harald Schneider 1 and Martin Walther 3 (1 Helmholtz-Zentrum Dresden-Rossendorf; 2 Technische Universität Dresden; 3 Fraunhofer IAF Freiburg) Two-photon quantum well infrared photodetectors in the THz-regime |
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| MoP126 | D. Kamburov, M.a. Mueed, M. Shayegan, L.N. Pfeiffer, K.W. West, K.W. Baldwin, and R. Winkler (Department of Electrical Engineering, Princeton University, USA; †Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA) Tuning Fermi contour anisotropy of GaAs of quasi-2D electron and hole systems in parallel magnetic fields |
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| MoP127 | M. Kołodziej and G. Harań (Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław) Spin-orbit coupling effect on a particle density correlation in a two-dimensional electron gas | |
| MoP128 | Erika Nascimento Lima, Tome M. Schmidt (Universidade Federal de Uberlandia) Spin texture of bismuth bilayers: an ab initio calculation | |
| MoP129 | M. Städter, M. Tallarida & D. Schmeißer (Brandenburg University of Technology, 03046 Cottbus, Germany) Fano profiles at the onset of the x-ray absorption spectra of SiO2 | |
| MoP130 | Matvey V. Entin1 and Lev I. Magarill1;2 (1Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia; 2Novosibirsk State University, Novosibirsk, 630090 Russia) In-plane stationary current in double-well structure | |
| MoP131 | A. N. Ramanayaka 1, Tianyu Ye 1, H-C. Liu 1, R. G. Mani 1, and W. Wegscheider 2 (1 Dept. of Physics & Astronomy, Georgia State University, Atlanta, GA 30303; 2 ETH-Zurich, 8093 Zurich, Switzerland) Linear polarization rotation study of the microwave radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs system | |
| MoP132 | K. Koike, Y. Kato, A. Endo, S. Katsumoto, and Y. Iye (Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan) Commensurability oscillations in the thermoelectric power of unidirectional lateral superlattices | |
| MoP133 | R. Moriya 1, Y. Hoshi 2, Y. Inoue 1, S. Masubuchi 1,3, K. Sawano 2, Y. Shiraki 2, N. Usami 4 and T. Machida 1,3 (1 Institute of Industrial Science, University of Tokyo, Tokyo, Japan; 2 Advanced Research Laboratories, Tokyo City University, Tokyo, Japan; 3 Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan; 4 Institute for Materials Research, Tohoku University, Sendai, Japan) Landau level crossing and anti-crossing of bilayer two-dimensional hole gas in Ge/SiGe quantum well | |
| MoP134 | S. A. Mikhailov (Institute of Physics, University of Augsburg, D-86135 Augsburg, Germany) Quantum theory of the second-order electromagnetic response of a low-dimensional electron gas | |
| MoP135 | Z. S. Momtaz1, G.M.Gusev1, A.D.Levin1 and A.K.Bakarov2 (1 Instituto de Física da Universidade de Sao Paulo, 135960-170, Sao Paulo, SP, Brazil; 2 Institute of Semiconductor Physics, Novosibirsk 630090, Russia) Nonlinear transport and inverted magneto-intersubband oscillations in a triple quantum wells |
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| MoP136 | C. A. Downing1, R. R. Hartmann2, I. A. Shelykh3 and M. E. Portnoi1 (1School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK; 2Physics Department, De La Salle University, Taft Avenue, Manila, Philippines; 3Science Institute, University of Iceland, Dunhagi 3, IS-107, Reykjavik, Iceland) Terahertz transitions and excitons in narrow-gap carbon nanotubes | |
| MoP137 | Sonia Sharmin1, Koji Muraki 2, and Toshimasa Fujisawa 1 (1 Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8551 Japan; 2 NTT Basic Research Laboratories, Atsugi 243-0198, Japan) Sharp current suppression at the triplet resonant tunneling in a two-electron double quantum dot | |
| MoP138 | N. Bagraev1, E. Danilovsky1, D. Gets1, E. Kalabukhova2, L. Klyachkin1, A. Malyarenko1, D. Savchenko2,3, B. Shanina2 (1Ioffe Physical-Technical Institute, Russia; 2Lashkaryov Institute of semiconductor physics, NASU, Ukraine; 3Institute of Physics, AS CR, Czech Republic) N-VSi-related center in non-irradiated 6H SiC nanostructure | |
| MoP139 | V. V. Korotyeyev1, V. A. Kochelap1, and L. Varani2 (1 Institute of Semiconductor Physics, NASU, Kiev, Ukraine; 2 Institut d'Electronique du Sud (CNRS UMR 5214), Universite Montpellier 2, Montpellier, France) Ballistic electron transport in cascade of n+ - i - n+ homo- and heterodiodes | |
| MoP140 | S. Birindelli 1, M. Felici 1, R. Trotta 2, A. Notargiacomo 3, A. Gerardino 3, S. Rubini 4, F. Martelli 4, M. Capizzi 1, A. Polimeni 1 (1 Dipartimento di Fisica, Sapienza Universite di Roma, P.le A. Moro 5, Roma, Italy; 2 Johannes Kepler University, Linz, Austria; 3 IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy; 4 TASC-INFM-CNR, S.S 14 Km 163.5, 34149 Trieste, Italy) Light polarization control by H-assisted strain modulation in GaAsN/GaAs heterostructures |
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| MoP141 | Rupak Bhattacharya 1, Richarj Mondal1, Pradip Khatua1, Alok Rudra2, Stefan Malzer3, G. Döhler3, Bipul Pal1, and Bhavtosh Bansal1 (1 Indian Institute of Science Education and Research Kolkata, Nadia 741252, India; 2 Ecole Polytechnique Fededrale de Lausanne, CH-1015 Lausanne, Switzerland; 3 Max Planck Institute for the Science of Light, 91058 Erlangen, Germany) Fundamental limits to the Urbach tail in GaAs quantum wells | |
| MoP142 | Jianliang Huang 1, Wenquan Ma 1, Yang Wei 1,Yanhua Zhang 1, Kai Cui 1, Yulian Cao 1, Xiaolu Guo 1, and Jun Shao 2 (1 Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East A35, Beijing 100083, China; 2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China) How to use type II InAs/GaSb superlattice structure to reach detection wavelength of 2-3 um? | |
| MoP143 | S. Prucnal1, S.Q. Zhou1, F. L. Bregolin1, X. Ou1, M. O. Liedke3, R. Huebner1, M. Helm1, J. Zuk2, M. Turek2, K. Pyszniak2, A. Drozdziel2, and W. Skorupa1 (1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany; 2Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, 20-035 Lublin, Poland; 3Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany ) Millisecond-range liquid phase recrystallization for III-V/Si heteronanojunction fabrication | |
| MoP144 | N. Bagraev 1, L. Klyachkin 1, R. Kuzmin 1, A. Malyarenko 1, V. Mashkov 2 (1 Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg; 2 St. Petersburg State Polytechnical University, St. Petersburg) The electroluminescence from p+-nanostructured Si - n-Si (100) heterojunctions | |
| MoP145 | V. T. Renard1, I. Duchemin2, Y. Niida3, A. Fujiwara4, Y. Hirayama3 and K. Takashina5 (1CEA-INAC/UJF-Grenoble 1, SPSMS, UMR-E 9001, 17 rue des martyrs, 38054 Grenoble cedex 9, France; 2CEA-INAC/UJF-Grenoble 1, SP2M, UMR-E 9001, 17 rue des martyrs, 38054 Grenoble cedex 9, France; 3Graduate School of Science, Tohoku University, 6-3 Aramakiaza Aoba, Aobaku, Sendai, 980-8578 Japan; 4NTT BRL, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan; 5Department of Physics, University of Bath, Bath BA2 7AY, UK) Influence of intervalley scattering on the metallic behavior in Si MOSFETs | |
| MoP146 | Yuriy Y. Gordiyenko, Dmytro A. Polietaiev and Bohdan V. Sokolenko (Taurida National V.I.Vernadsky University) Radiation losses in resonator measurement converters for scanning microwave microscopy | |
| MoP147 | G. Pettinari 1,3, N. Balakrishnan 1, O. Makarovsky 1, R.P. Campion1, A. Polimeni2, M. Capizzi 2 and A. Patane 1 (1 School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD,UK; 2 Dipartimento di Fisica, Sapienza Universita di Roma, P.le A. Moro 2, 00185 Roma, Italy; 3 IFN-CNR, via Cineto Romano 42, 00156 Roma, Italy) A movable light emitting area in resonant tunneling diodes | |
| MoP148 | L. Schrottke1, M. Wienold1, R. Sharma1, X. Lü1, K. Biermann1, A. Tahraoui1, H. Richter2, H.-W. Hübers2;3, and H. T. Grahn1 (1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany; 2Deutsches Zentrum für Luft- und Raumfahrt, Institut für Planetenforschung, Rutherfordstr. 2, 12489 Berlin, Germany; 3Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin, Germany) A customized THz quantum-cascade laser as the local oscillator for a heterodyne receiver at 4.745 THz |
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| MoP149 | Pawel Strak1, Pawel Kempisty1, and Stanisaw Krukowski1;2 (1Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland; 2Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawinskiego 5a, 02-106 Warsaw, Poland) DFT simulation of the physical properties of AlN/GaN multiquantum well (MQWs) system | |
| MoP150 | Pawel Strak1, Pawel Kempisty1, and Stanisław Krukowski1;2 (1Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland; 2Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawinskiego 5a, 02-106 Warsaw, Poland) Ab initio DFT simulation of the physical properties of InN/GaN multiquantum wells | |
| MoP151 | Naveen Rawat 1, Z. Pan 1, L. Manning 1, R. Waterman 1, S. McGill 2 and M. Furis1 (1Material Science Program, University of Vermont, Burlington VT, USA; 2The National High Magnetic Field Laboratory (NHMFL), Tallahassee, Florida, USA) MCD of crystalline thin film organic semiconductors | |
| MoP152 | O. Yastrubchak1, J. Sadowski2,3, J. Z. Domagala2, Ł. Gluba1, J. Żuk1 and T. Wosiński2 (1Institute of Physics, Maria Curie-Skłodowska University in Lublin, Pl. Marii Curie-Skłodowskiej 1,20-031 Lublin, Poland); 2Institute of Physics, PAN, 02-668 Warsaw, Poland; 3MAX-Lab, Lund University, 22100 Lund, Sweden) Virtual crystal approximation versus valence band anticrossing model of the band structure in the (Ga,Mn)As and (Ga,Bi)As epitaxial layers | |
| MoP153 | O. Del Pozo-Zamudio1, I. J. Luxmoore1, R. Toro1, N. A. Wasley1, E. A. Chekhovich1 A.M. Sanchez2, R. Beanland2, A. M. Fox1, M. S. Skolnick1, H. Y. Liu3 and A. I. Tartakovskii1 (1Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, UK; 2Department of Physics, University of Warwick, Coventry CV4 7AL, UK33; 3Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE) III-V quantum light source and cavity-QED on Silicon | |
| MoP154 | Tianyu Ye1, R. G. Mani1 and W. Wegscheider2 (1Georgia State University, Atlanta, GA 30303 USA; 2ETH-Zurich, 8093 Zurich, Switzerland) Nonlinear growth in the microwave reflection signal from the GaAs/AlGaAs 2DES in the regime of radiation-induced magnetoresistance oscillations |